A new etching process of aluminum alloy for submicron multi-level metallization

Author

Dohmae, Shin-ichi ; Mayumi, Shuichi ; Ueda, Seiji

Author_Institution

Matsushita Electron. Corp., Kyoto, Japan

fYear

1990

fDate

12-13 Jun 1990

Firstpage

275

Lastpage

281

Abstract

A new dry etch process for Al alloy films where the fluorinated polymer films are formed on metal sidewalls by plasma treatment with CHF ₃ between main etch and overetch was developed. Reentrance in profile and critical dimension (CD) losses are completely suppressed by this process. The yields of submicron metal patterns fabricated by this process are much higher with a larger process window than by a conventional process. The results of the Auger electron spectroscopy (AES) analyses on the sidewall reveal that the fluorinated polymer films are durable enough to prevent side etching and after-corrosion of Al-Si-Cu interconnects

Keywords

Auger effect; aluminium alloys; copper alloys; metallisation; silicon alloys; sputter etching; AlSiCu; Auger electron spectroscopy; critical dimension; dry etch process; main etch; metal sidewalls; overetch; plasma treatment; submicron metal patterns; Aluminum alloys; Dry etching; Glass; Integrated circuit interconnections; Metallization; Optical films; Plasma applications; Polymer films; Resists; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127877

Filename

127877