Title :
A new etching process of aluminum alloy for submicron multi-level metallization
Author :
Dohmae, Shin-ichi ; Mayumi, Shuichi ; Ueda, Seiji
Author_Institution :
Matsushita Electron. Corp., Kyoto, Japan
Abstract :
A new dry etch process for Al alloy films where the fluorinated polymer films are formed on metal sidewalls by plasma treatment with CHF 3 between main etch and overetch was developed. Reentrance in profile and critical dimension (CD) losses are completely suppressed by this process. The yields of submicron metal patterns fabricated by this process are much higher with a larger process window than by a conventional process. The results of the Auger electron spectroscopy (AES) analyses on the sidewall reveal that the fluorinated polymer films are durable enough to prevent side etching and after-corrosion of Al-Si-Cu interconnects
Keywords :
Auger effect; aluminium alloys; copper alloys; metallisation; silicon alloys; sputter etching; AlSiCu; Auger electron spectroscopy; critical dimension; dry etch process; main etch; metal sidewalls; overetch; plasma treatment; submicron metal patterns; Aluminum alloys; Dry etching; Glass; Integrated circuit interconnections; Metallization; Optical films; Plasma applications; Polymer films; Resists; Surface topography;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127877
