DocumentCode
2756579
Title
Design, characterization and modelling of a CMOS magnetic field sensor
Author
Latorre, L. ; Bertrand, Y. ; Hazard, P. ; Pressecq, F. ; Nouet, P.
Author_Institution
LIRMM, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fYear
1999
fDate
9-12 March 1999
Firstpage
239
Lastpage
243
Abstract
This paper presents both the design and the characterization of a full CMOS magnetic field sensor. As an alternative to Hall effect sensors, it acts as a microscopic cantilever, deformed under the action of the Lorentz force.
Keywords
CMOS integrated circuits; frequency-domain analysis; magnetic sensors; micromechanical resonators; microsensors; semiconductor device models; Lorentz force; MEMS; anisotropic etching; frequency-domain response; full CMOS magnetic field sensor; microscopic cantilever; modelling; sensor characterization; sensor design; suspended structures; Application specific integrated circuits; CMOS process; CMOS technology; Costs; Magnetic sensors; Manufacturing; Mechanical sensors; Semiconductor device modeling; Sensor phenomena and characterization; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation and Test in Europe Conference and Exhibition 1999. Proceedings
Conference_Location
Munich, Germany
Print_ISBN
0-7695-0078-1
Type
conf
DOI
10.1109/DATE.1999.761128
Filename
761128
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