DocumentCode :
2756667
Title :
Photoluminescence lifetime distributions of amorphous and porous semiconductors, and organic luminescent materials; wideband quadrature frequency resolved spectroscopy extending over 11 decades
Author :
Aoki, T. ; Ikeda, K. ; Urashima, T. ; Kaneko, T. ; Saitou, D. ; Kobayashi, S.
Author_Institution :
Dept. of Electron. & Comput. Eng., Tokyo Polytech Univ.
fYear :
2005
fDate :
1-4 May 2005
Firstpage :
211
Lastpage :
214
Abstract :
Here we present a newly developed wideband quadrature frequency resolved spectroscopy (QFRS) allowing analysis of photoluminescence (PL) lifetime over almost 11 decades (2 ns to 160 s). The system consists of dual phase double lock-in (DPDL) QFRS for lifetimes from ns to mus and internal mode QFRS for longer lifetime up to 160 s. The QFRS results of amorphous semiconductors exhibit the triple-peaked structures of lifetime distribution, well-known two peaks of which are attributed to singlet- and triplet-excitons, and the third and longest one, to distant-pair recombination being typical for amorphous materials. We also demonstrate double-peaked lifetime distributions of highly Ir(ppy) 3-doped organic films as well as rapidly oxidized porous silicon (PS)
Keywords :
amorphous semiconductors; carrier lifetime; excitons; organic semiconductors; photoluminescence; porous semiconductors; semiconductor thin films; amorphous semiconductors; double-peaked lifetime distributions; dual phase double lock-in; organic films; organic luminescent materials; photoluminescence lifetime distributions; porous semiconductors; rapidly oxidized porous silicon; triple-peaked structures; wideband quadrature frequency resolved spectroscopy; Amorphous materials; Amorphous semiconductors; Frequency; Organic materials; Photoluminescence; Radiative recombination; Semiconductor films; Semiconductor materials; Spectroscopy; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2005. Canadian Conference on
Conference_Location :
Saskatoon, Sask.
ISSN :
0840-7789
Print_ISBN :
0-7803-8885-2
Type :
conf
DOI :
10.1109/CCECE.2005.1556912
Filename :
1556912
Link To Document :
بازگشت