Title :
Development of TFT-LCD TAB modules
Author :
Hayashi, N. ; Naito, H. ; Osada, O. ; Adachi, Y. ; Kubota, Y. ; Yoshifuku, T. ; Atsumi, K. ; Yamaya, Y. ; Takeno, S. ; Nakano, H.
Author_Institution :
Toshiba Corp., Kanagawa, Japan
Abstract :
The authors have developed 4-in and 6.5-in diagonal a-Si thin-film-transistor, active-matrix, liquid-crystal-display (TFT-LCD) modules using tape automated bonding (TAB) technology. The small frame size, 12.5 mm for 4-in modules, has been realized by using U-shape bending tape carriers. In the inner-lead-bonding process, the Au bumps on a driver LSI are connected to the Cu/Sn inner leads on a tape carrier by a high-speed, fully automated gang bonding technique. The LSIs are encapsulated with halogen-ion-free epoxy resin. In the outer-lead-bonding (OLB) process, the Al electrodes on an LC panel are connected to the outer leads on a tape carrier through an anisotropic conductive film (ACF) by a thermocompression apparatus. The ACF, which consists of thermosetting resin and dispersed Ni particles, realizes highly reliable OLB. The TFT-LCD module reliability was confirmed by various environmental and mechanical tests
Keywords :
amorphous semiconductors; circuit reliability; elemental semiconductors; encapsulation; lead bonding; liquid crystal displays; modules; silicon; surface mount technology; thin film transistors; 12.5 mm; 4 in; 6.5 in; Al electrodes; Au bumps; Au-Sn-Cu; Cu/Sn inner leads; SMT; TFT-LCD TAB modules; U-shape bending tape carriers; active-matrix; amorphous Si; amorphous semiconductors; anisotropic conductive film; automated gang bonding technique; dispersed Ni particles; driver LSI; encapsulation; halogen-ion-free epoxy resin; inner-lead-bonding process; liquid-crystal-display; microassembly; outer-lead-bonding; surface mounting; tape automated bonding; thermocompression apparatus; thermosetting resin; thin-film-transistor; Anisotropic conductive films; Bonding; Driver circuits; Electrodes; Gold; Integrated circuit interconnections; Large scale integration; Lead; Thin film transistors; Tin;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International
Conference_Location :
Nara
DOI :
10.1109/IEMTS.1989.76114
