Semiconductor compound alloys related to InN and their application in design of semiconductor lasers

The optical properties of the semiconductors InGaN, InAIN, and InN containing oxygen impurities and their application in the design of electron devices are subject of investigation in this paper. The existence of energy pockets is identified for the electrons in both the conduction band and the valence band. It is found that the electron transition between energy pockets of the valence band and energy pockets of the conduction band is allowed if special conditions are satisfied. This phenomenon constituents tunnel absorption occurs if the transition is due to the photon absorption. The existence of excitons formed by electrons located in pockets of the conduction band and holes in pockets of the valence band is identified. It is found the annihilation between both charges gives PL luminescence. Theoretical results are obtained and they show good agreements with the experimental data. The obtained results are used for determination of some parameters of the active optical media of the semiconductor lasers