Characterising trench IGBTs in resonant switching using single ended and half-bridge application circuits

This paper reports the behaviour of a new class of 1.2 kV, 25 A NPT trench gate IGBT in zero current switching (ZCS) and zero voltage switching (ZVS) and compares its performance with an equivalent state-of the-art DMOS IGBT. Two low-medium power application circuits are used as test circuits for characterisation. With its superior on-state modulation characteristics the trench IGBT shows better performance during conduction, particularly at high frequencies and high currents. However in the ZVS mode turn-off losses should be minimised by optimising circuit parameters in order to utilise the on-state performance advantage of the trench IGBT.