• DocumentCode
    2757207
  • Title

    First principles calculations of intrinsic breakdown in covalently bonded crystals

  • Author

    Sun, Ying ; Boggs, Steven ; Ramprasad, Ramamurthy

  • Author_Institution
    Inst. of Mater. Sci., Univ. of Connecticut, Storrs, CT, USA
  • fYear
    2012
  • fDate
    10-13 June 2012
  • Firstpage
    34
  • Lastpage
    37
  • Abstract
    A first principles quantum-mechanical method has been developed for estimating intrinsic breakdown strength of insulating materials. The calculations are based on an average electron model which assumes breakdown occurs when the average energy gain from the electric field and phonon absorption exceeds average energy loss to phonons. Our approach is based on density functional perturbation theory (DFPT) and on the direct integration of electronic scattering probabilities over all possible final states, with no adjustable parameters. Computed intrinsic breakdown field is provided for several covalently bonded materials and compared with experimental data from the literature with good agreement. The numerical model provides physical insight into the material properties which affect breakdown.
  • Keywords
    density functional theory; electric breakdown; insulating materials; quantum theory; DFPT); average electron model; covalently bonded crystals; density functional perturbation theory; electric field; electronic scattering probability; insulating materials; intrinsic breakdown field; intrinsic breakdown strength; phonon absorption exceeds; quantum mechanical method; Electric breakdown; Electric fields; Energy loss; Phonons; Scattering; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation (ISEI), Conference Record of the 2012 IEEE International Symposium on
  • Conference_Location
    San Juan, PR
  • ISSN
    1089-084X
  • Print_ISBN
    978-1-4673-0488-7
  • Electronic_ISBN
    1089-084X
  • Type

    conf

  • DOI
    10.1109/ELINSL.2012.6251421
  • Filename
    6251421