DocumentCode
2757207
Title
First principles calculations of intrinsic breakdown in covalently bonded crystals
Author
Sun, Ying ; Boggs, Steven ; Ramprasad, Ramamurthy
Author_Institution
Inst. of Mater. Sci., Univ. of Connecticut, Storrs, CT, USA
fYear
2012
fDate
10-13 June 2012
Firstpage
34
Lastpage
37
Abstract
A first principles quantum-mechanical method has been developed for estimating intrinsic breakdown strength of insulating materials. The calculations are based on an average electron model which assumes breakdown occurs when the average energy gain from the electric field and phonon absorption exceeds average energy loss to phonons. Our approach is based on density functional perturbation theory (DFPT) and on the direct integration of electronic scattering probabilities over all possible final states, with no adjustable parameters. Computed intrinsic breakdown field is provided for several covalently bonded materials and compared with experimental data from the literature with good agreement. The numerical model provides physical insight into the material properties which affect breakdown.
Keywords
density functional theory; electric breakdown; insulating materials; quantum theory; DFPT); average electron model; covalently bonded crystals; density functional perturbation theory; electric field; electronic scattering probability; insulating materials; intrinsic breakdown field; intrinsic breakdown strength; phonon absorption exceeds; quantum mechanical method; Electric breakdown; Electric fields; Energy loss; Phonons; Scattering; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation (ISEI), Conference Record of the 2012 IEEE International Symposium on
Conference_Location
San Juan, PR
ISSN
1089-084X
Print_ISBN
978-1-4673-0488-7
Electronic_ISBN
1089-084X
Type
conf
DOI
10.1109/ELINSL.2012.6251421
Filename
6251421
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