Title :
Unique MOSFET/IGBT drivers and their applications in future power electronic systems
Author :
Pathak, Abhijit D. ; Ochi, Sam
Author_Institution :
Dept. of Applications Eng., IXYS Corp., Santa Clara, CA, USA
Abstract :
Advances and breakthroughs continue in MOSFET and IGBT device technology and control strategies to accomplish goals of efficiency and compactness. It is imperative then to have matched MOSFET/ IGBT driver technology and techniques for reaping all the benefits. This paper describes three unique power management ICs: a 30 amp driver, a 45 MHz driver and a 6 amp high/low side phase-leg driver. These drivers deliver the required di/dt, minimize switching and conduction losses, enhance dv/dt immunity, offer UV, OV, features and OL/DESAT protections with soft turn-off using a novel ENABLE function. Unique circuitry is built-in to avoid cross conduction in the output stage of the driver IC. The paper describes many technical issues in applying these "first of a kind" products in modern day power electronics.
Keywords :
driver circuits; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; 30 A; 45 MHz; 6 A; ENABLE function; IC drivers; IGBT driver technology; MOSFET driver technology; conduction losses; cross conduction; heat dissipation methods; insulated gate bipolar transistors; integrated circuit; metal-oxide-semiconductor field effect transistors; phase-leg driver; power electronic systems; power management; switching minimization; Circuit testing; Driver circuits; Insulated gate bipolar transistors; Integrated circuit layout; MOSFET circuits; Power MOSFET; Power electronics; Propagation delay; Signal design; Switching loss;
Conference_Titel :
Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on
Print_ISBN :
0-7803-7885-7
DOI :
10.1109/PEDS.2003.1282684
