Unique MOSFET/IGBT drivers and their applications in future power electronic systems

Author

Pathak, Abhijit D. ; Ochi, Sam

Author_Institution

Dept. of Applications Eng., IXYS Corp., Santa Clara, CA, USA

Volume

1

fYear

2003

fDate

17-20 Nov. 2003

Firstpage

85

Abstract

Advances and breakthroughs continue in MOSFET and IGBT device technology and control strategies to accomplish goals of efficiency and compactness. It is imperative then to have matched MOSFET/ IGBT driver technology and techniques for reaping all the benefits. This paper describes three unique power management ICs: a 30 amp driver, a 45 MHz driver and a 6 amp high/low side phase-leg driver. These drivers deliver the required di/dt, minimize switching and conduction losses, enhance dv/dt immunity, offer UV, OV, features and OL/DESAT protections with soft turn-off using a novel ENABLE function. Unique circuitry is built-in to avoid cross conduction in the output stage of the driver IC. The paper describes many technical issues in applying these "first of a kind" products in modern day power electronics.

Keywords

driver circuits; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; 30 A; 45 MHz; 6 A; ENABLE function; IC drivers; IGBT driver technology; MOSFET driver technology; conduction losses; cross conduction; heat dissipation methods; insulated gate bipolar transistors; integrated circuit; metal-oxide-semiconductor field effect transistors; phase-leg driver; power electronic systems; power management; switching minimization; Circuit testing; Driver circuits; Insulated gate bipolar transistors; Integrated circuit layout; MOSFET circuits; Power MOSFET; Power electronics; Propagation delay; Signal design; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on

Print_ISBN

0-7803-7885-7

Type

conf

DOI

10.1109/PEDS.2003.1282684

Filename

1282684