Title :
Multiple quantum well acousto-optic and electro-optic modulators
Author :
Bhattacharjee, K.K. ; Jain, F.C.
Author_Institution :
Connecticut Univ., Storrs, CT, USA
Abstract :
Electrooptic Bragg modulator structures are proposed using the enhancement of refractive index variation due to the quantum confined Stark effect (QCSE). The electrooptic effect enhanced by the QCSE in AlGaAs-GaAs multiple quantum well (MQW) layers, is shown to result in high-performance Bragg modulators. A 100% diffraction efficiency at a wavelength of 0.885 μm is shown to be achievable using a structure 200-μm long with a loss of about 6 dB for an applied electric field in the range of 105 V/cm
Keywords :
III-V semiconductors; Stark effect; acousto-optical devices; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; semiconductor quantum wells; 0.885 micron; 6 dB; AlGaAs-GaAs multiple quantum wells; Bragg modulator structures; III-V semiconductors; acousto-optic modulators; diffraction efficiency; electro-optic modulators; electrooptic effect; high-performance; quantum confined Stark effect; refractive index changes; Absorption; Electrooptic modulators; Optical modulation; Optical refraction; Optical variables control; Polarization; Quantum well devices; Refractive index; Surface acoustic waves; Tellurium;
Conference_Titel :
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location :
Honolulu, HI
DOI :
10.1109/ULTSYM.1990.171438
