A 1.2-V high-gain UWB mixer utilizing current mirror topology

Author

Wu, Chang-Hsi ; Chou, Hung-Ting

Author_Institution

Dept. of Electron. Eng., Lunghwa Univ. of Sci. & Technol., Guishan Shiang, Taiwan

Volume

1

fYear

2010

fDate

20-23 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

A low-voltage high-gain double-balanced mixer for direct-conversion ultra-wideband (UWB) receiver based on CMOS 0.18 μm process is presented in this paper. The conversion gain of the proposed mixer is mainly boosted by current mirror technique and RF leakage-resonant technique. Measured results of the proposed mixer exhibit the conversion gain of 12.38 dB to 15.69 dB and the third-order intercept point (IIP3) of -5 dBm to -1.64 dBm in the UWB range from 3 GHz to 5 GHz, while it consumes 7.2 mW under only 1.2 V supply voltage. The chip size including pads is 0.9 mm².

Keywords

CMOS integrated circuits; current mirrors; microwave integrated circuits; microwave mixers; network topology; ultra wideband communication; CMOS process; RF leakage-resonant technique; current mirror topology; direct-conversion ultrawideband receiver; frequency 3 GHz to 5 GHz; gain 12.38 dB to 15.69 dB; high-gain UWB mixer; low-voltage high-gain double-balanced mixer; power 72 mW; size 0.18 mum; third-order intercept point; voltage 1.2 V; CMOS integrated circuits; Gain; Mirrors; Mixers; Radio frequency; Topology; Voltage measurement; CMOS Mixer; Current Mirror; Double-balanced; Low-voltage; UWB;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-5305-4

Electronic_ISBN

978-1-4244-5306-1

Type

conf

DOI

10.1109/ICUWB.2010.5615600

Filename

5615600