Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

Author

Hoskens, R.C.P. ; van de Roer, T.G. ; Tolstikhin, V.I. ; Forster, A.

Author_Institution

COBRA Inter-Univ. Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands

Volume

2

fYear

2000

fDate

2000

Firstpage

444

Abstract

The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted gain-switching to directly modulate the optical field intensity at frequencies up to 100 GHz and to decrease the wavelength chirp. Lasing has been observed for the first time now at 70 K, with a threshold current density of about 1.7 kA/cm², from the current AlGaAs-GaAs HEL with InGaAs bulk active layer

Keywords

III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; gallium arsenide; hot carriers; hot electron transistors; molecular beam epitaxial growth; phototransistors; semiconductor lasers; 70 K; AlGaAs-GaAs; InGaAs; InGaAs bulk active layer; carrier-heating assisted gain-switching; carrier-heating effects; high-speed low-chirp direct modulation; hot electron injection laser; optical field intensity; optical gain; threshold current density; vertically integrated transistor-laser structure; wavelength chirp; Chirp modulation; Electron optics; Frequency; Indium gallium arsenide; Integrated optics; Intensity modulation; Optical design; Optical modulation; Secondary generated hot electron injection; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.893905

Filename

893905