Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Author

Kantanen, Mikko ; Varonen, Mikko ; Kärkkäinen, Mikko ; Karttaavi, Timo ; Weber, Rainer ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Närhi, Tapani ; Halonen, Kari A I

Author_Institution

MilliLab, Espoo

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

173

Lastpage

176

Abstract

This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2times15 mum in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.

Keywords

MMIC amplifiers; S-parameters; coplanar waveguides; high electron mobility transistors; low noise amplifiers; coplanar MHEMT MMIC low noise amplifiers; coplanar waveguide topology; frequency 155 GHz; metamorphic high electron mobility transistors; noise figures; scattering parameters; Coplanar waveguides; Gain measurement; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Noise measurement; mHEMTs; High electron mobility transistors; Low noise amplifiers; MMIC amplifiers; Metamorphic HEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429402

Filename

4429402