DocumentCode
2757922
Title
D7. Fabrication of crystalline silicon nanowires with different dimensions for solar cell applications
Author
Razk, Sara Abdel ; Allam, Nageh K. ; Swillam, Mohamed A.
Author_Institution
American Univ. in Cairo, Cairo, Egypt
fYear
2015
fDate
24-26 March 2015
Firstpage
371
Lastpage
379
Abstract
Vertical single crystalline silicon nanowires (SiNWs)with different dimensions can be fabricated by metal assisted chemical etching method. The dimensions of the fabricated silicon nanowires increase by increasing the etching time at 60-80°C. The diameters of the fabricated silicon nanowires were between 117-650 nm and the lengths were between 8-18 nm. The changing in the dimensions has a strong effect on the optical properties of the fabricated silicon nanowires. The absorption decreases with increasing the dimensions of SiNWs. The simulations by using finite difference time domain have been used to investigate the optical properties of the SiNWs. The results of the simulation showed good agreement with the experimental result for the fabricated SiNWs with different diameters.
Keywords
elemental semiconductors; etching; finite difference time-domain analysis; nanofabrication; optical properties; silicon; solar cells; Si; finite difference time domain method; metal assisted chemical etching method; optical properties; size 117 nm to 650 nm; size 8 nm to 18 nm; solar cell; temperature 60 degC to 80 degC; vertical single crystalline silicon nanowire fabrication; Absorption; Nanowires; Optical surface waves; Surface treatment; Silicon nanowires; Solar cells; absorption;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference (NRSC), 2015 32nd National
Conference_Location
6th of October City
Print_ISBN
978-1-4799-9945-3
Type
conf
DOI
10.1109/NRSC.2015.7117851
Filename
7117851
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