DocumentCode
2757962
Title
D10. Co-tunneling effect on single electron circuits
Author
Elabd, Ali A. ; Shalaby, Abdelaziz T. ; El-Rabaie, El-Sayed M.
Author_Institution
Fac. of Electron. Eng., Menoufia Univ., Menouf, Egypt
fYear
2015
fDate
24-26 March 2015
Firstpage
396
Lastpage
402
Abstract
In this paper, we discuss the effect of simultaneous tunneling events on single electron circuits. Single electron circuits are classified into two types: the first is a small single electron circuit with one island, and the second type is a large circuit with multi islands. The simulation of co-tunneling process is incorporated in a new version of our simulator MUSES. The simulation results for small circuits´ type are compared with the analytical equations for certain range of temperature that is presented by the founders of the phenomena. Also the results for large circuits´ type are compared with the widely accepted nanostructures simulator SIMON.
Keywords
circuit simulation; single electron devices; tunnelling; MUSES; SIMON; co-tunneling effect; nanostructures simulator; single electron circuit; Logic gates; Tunneling; Co-Tunneling; MUSES; Quantum tunneling; Single Electron Circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference (NRSC), 2015 32nd National
Conference_Location
6th of October City
Print_ISBN
978-1-4799-9945-3
Type
conf
DOI
10.1109/NRSC.2015.7117854
Filename
7117854
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