Title :
High performance LNA in 0.35 um SiGe RF transceiver one chip for cellular applications
Author :
Ahn, Kwang-Ho ; Keum, Dong-Jin ; Rhyu, In-Hyo ; Kim, Hyun-seok ; Jeon, Yu-Beum ; Yoo, Hwa-Yul ; Han, Joo-Young ; Baek, Joon-Hyun
Author_Institution :
Wireless Components & Telecommun. Res. Centerand Korea Electron. Technol. Inst., Gyeonggi-Do
Abstract :
This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively.
Keywords :
BiCMOS integrated circuits; cellular radio; code division multiple access; low noise amplifiers; transceivers; BiCMOS process; SiGe; SiGe RF transceiver one chip; cellular applications; code division multiple access; high performance LNA; input 3rd order intercept point; low noise amplifier; one chip transceiver integrated circuit; Circuit testing; Germanium silicon alloys; Integrated circuit noise; Integrated circuit testing; Low-noise amplifiers; Multiaccess communication; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transceivers; BiCMOS; CDMA; LNA; SiGe; cellular; linearity; noise figure; transceiver;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429406
