DocumentCode :
2758146
Title :
Reduced surface recombination and strongly enhanced light extraction in CH4-plasma-irradiated GaInAsP photonic crystals
Author :
Ichikawa, Hiroyuki ; Inoshita, K. ; Baba, Toshihiko
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
490
Abstract :
We report on the substantial reduction in surface recombination and 40 fold increase in light extraction efficiency of CH4-plasma-irradiated GaInAsP photonic crystals of micro-columns. These results will significantly contribute to the improvement in LED efficiency
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; photonic band gap; semiconductor quantum wells; sputter etching; surface recombination; CH4-plasma-irradiated; GaInAsP; GaInAsP photonic crystals; LED efficiency; light extraction efficiency; micro-columns; strongly enhanced light extraction; surface recombination; Charge carrier lifetime; Etching; Light emitting diodes; Optical computing; Photonic crystals; Plasma applications; Plasma materials processing; Plasma properties; Spontaneous emission; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
ISSN :
1092-8081
Print_ISBN :
0-7803-5947-X
Type :
conf
DOI :
10.1109/LEOS.2000.893928
Filename :
893928
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2758146
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