DocumentCode
2758251
Title
Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
Author
Angelov, I. ; Andersson, K. ; Schreurs, D. ; Xiao, D. ; Rorsman, N. ; Desmaris, V. ; Sudow, M. ; Zirath, H.
Author_Institution
Chalmers Univ. of Technol., Gothenburg
fYear
2006
fDate
12-15 Dec. 2006
Firstpage
279
Lastpage
282
Abstract
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and to provide a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
Keywords
Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; MESFET; SiC; commercial CAD tool; dispersion; harmonics management; Aluminum gallium nitride; Etching; FETs; Frequency; Gallium nitride; HEMTs; MESFETs; MODFETs; Power generation; Silicon carbide; FET; Transistor Models;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-4-902339-08-6
Electronic_ISBN
978-4-902339-11-6
Type
conf
DOI
10.1109/APMC.2006.4429422
Filename
4429422
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