Charge carrier extraction IGBT model for circuit simulators

This paper presents a comprehensive physical-based spatial analytical model for the turn-off behavior of a 6,5kV-IGBT and its implementation in the circuit simulator Saber. The basic idea is that the voltage slope at turn-off is determined by the sweep out of the plasma by the difference between the collector current and the MOS channel current. The resulting equations for the width of the space charge region, the electrical field and the collector-emitter voltage can be solved analytically. The switching process from the forward into the blocking state is calculated dynamically in contribution to the carrier distribution and changing electron and holes currents. The implementation of physical laws and measured parameters enable a simulation of the turn off behavior without fitting parameters and give insight into internal device behavior. Despite of complexity the model can be used as circuit simulator model, which enables more exactly conclusions for the IGBT gate control than common circuit simulator models. The created model shows a good performance even under very demanding switching conditions.