DocumentCode
2758347
Title
Long-finger HBT analysis based on device and EM co-simulation using FDTD method
Author
Shinohara, Yasuta ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution
Univ. of Electro-Commun., Tokyo
fYear
2006
fDate
12-15 Dec. 2006
Firstpage
291
Lastpage
294
Abstract
This paper presents an integrated analysis of a FDTD electromagnetic field simulation and a device simulation applying for HBT´s having long-finger structure. The SPICE model extracting device parameter was used instead of physical model. As a result, the FDTD simulation results were the same tendency to measurement results. Additionally the comparison of gold line with lossless line as finger was shown.
Keywords
SPICE; electromagnetic fields; finite difference time-domain analysis; heterojunction bipolar transistors; semiconductor device models; FDTD method; SPICE; device simulation; electromagnetic field simulation; finite-difference time-domain; long-finger HBT analysis; technology computer aided design; Analytical models; Electromagnetic analysis; Electromagnetic fields; Electromagnetic measurements; Fingers; Finite difference methods; Gold; Heterojunction bipolar transistors; SPICE; Time domain analysis; Device and EM co-simulation; FDTD; TCAD; long-finger HBT;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-4-902339-08-6
Electronic_ISBN
978-4-902339-11-6
Type
conf
DOI
10.1109/APMC.2006.4429425
Filename
4429425
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