Title :
Long-finger HBT analysis based on device and EM co-simulation using FDTD method
Author :
Shinohara, Yasuta ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Tokyo
Abstract :
This paper presents an integrated analysis of a FDTD electromagnetic field simulation and a device simulation applying for HBT´s having long-finger structure. The SPICE model extracting device parameter was used instead of physical model. As a result, the FDTD simulation results were the same tendency to measurement results. Additionally the comparison of gold line with lossless line as finger was shown.
Keywords :
SPICE; electromagnetic fields; finite difference time-domain analysis; heterojunction bipolar transistors; semiconductor device models; FDTD method; SPICE; device simulation; electromagnetic field simulation; finite-difference time-domain; long-finger HBT analysis; technology computer aided design; Analytical models; Electromagnetic analysis; Electromagnetic fields; Electromagnetic measurements; Fingers; Finite difference methods; Gold; Heterojunction bipolar transistors; SPICE; Time domain analysis; Device and EM co-simulation; FDTD; TCAD; long-finger HBT;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429425
