DocumentCode
2758368
Title
Coupled electrothermal and electromagnetic modeling, simulation and design of RF and microwave power FETs
Author
Snowden, Christopher M.
fYear
2006
fDate
12-15 Dec. 2006
Firstpage
295
Lastpage
304
Abstract
The design and modeling of power FETs for microwave power amplifiers is described, based on physical and equivalent circuit models coupled to electro-thermal and electromagnetic simulations. The results from this work reveal complex behavior in large high frequency power devices and facilitate the design of very high power, high efficiency transistors. This approach allows the maximizing of power added efficiency and assists in optimizing the thermal management and circuit design.
Keywords
equivalent circuits; microwave power amplifiers; microwave transistors; circuit design; coupled electrothermal-electromagnetic modeling; equivalent circuit models; high efficiency transistors; microwave power amplifiers; thermal management; Circuit simulation; Coupling circuits; Electromagnetic coupling; Electromagnetic modeling; Electrothermal effects; FETs; Microwave amplifiers; Microwave devices; Radio frequency; Thermal management; Power transistors; design; microwave power FET; pHEMT; physical modeling; power amplifiers; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-4-902339-08-6
Electronic_ISBN
978-4-902339-11-6
Type
conf
DOI
10.1109/APMC.2006.4429426
Filename
4429426
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