Title :
High power and high reliability InGaAs broad area lasers emitting between 910 and 980 nm
Author :
Yao Zou ; Zucker, Erik ; Uppal, Kushant ; Coblentz, Debbic ; Liang, Pamela ; Peters, Matthew ; Craig, Richard
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
High power InGaAs multi-mode broad area semiconductor lasers emitting between 910 nm and 980 nm are required as optical pumps for Er + and Yb+ doped double clad fiber lasers and amplifiers. Double clad fibers and amplifiers have found increasing commercial applications in both communication and industrial fields, where high power and high reliability are required. We developed two generations of devices to meet this need, which are discussed separately
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser reliability; optical pumping; semiconductor lasers; 910 to 980 nm; Er+-doped double clad fiber amplifiers; Er+-doped double clad fiber lasers; InGaAs; InGaAs broad area lasers; Yb+- doped double clad fiber amplifiers; Yb+-doped double clad fiber lasers; amplifiers; commercial applications; communication fields; double clad fibers; high power lasers; high power multi-mode broad area semiconductor lasers; high reliability lasers; industrial fields; optical pumps; Doped fiber amplifiers; Fiber lasers; Indium gallium arsenide; Optical fiber amplifiers; Optical fiber communication; Optical fiber devices; Power lasers; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893938
