A low power SiGe GSM/DCS/WCDMA receiver

Author

Madihian, Mohammad

Author_Institution

NEC Lab. America, Inc., Princeton

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

305

Lastpage

308

Abstract

This paper deals with the design consideration and performance results for a low power SiGe receiver developed for the GSM/DCS/WCDMA multi-band cellular systems. The receiver IC chip comprises a current reuse low-noise amplifier, an active balun, a double balanced Gilbert mixer with improved IIP3 and interstage matching, and the related bias circuits. The receiver chip consumes 10 mA at 3 V to provide a power gain of higher than 30 dB, a noise figure lower than 4.3 dB, and an IIP3 higher than -21 dBm, over 0.9-2 GHz. With such a low current consumption, these circuits are ideal candidates for low-power multimode mobile terminal applications.

Keywords

Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; code division multiple access; low noise amplifiers; radio receivers; semiconductor materials; DCS; GSM; SiGe; WCDMA; active balun; bias circuits; current 10 mA; double balanced Gilbert mixer; frequency 0.9 GHz to 2 GHz; interstage matching; low power SiGe receiver; low-noise amplifier; low-power multimode mobile terminal; multiband cellular systems; receiver IC chip; voltage 3 V; Circuits; Distributed control; GSM; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Multiaccess communication; Noise figure; Radio frequency; Silicon germanium; Amplifier; Cellular; Direct Conversion; Receiver; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429427

Filename

4429427