DocumentCode
2758417
Title
A 5.8 GHz 1.7 dB NF fully integrated differential low noise amplifier in CMOS
Author
Aspemyr, Lars ; Sjöland, Henrik ; Jacobsson, Harald ; Bao, Mingquan ; Carchon, Geert
Author_Institution
Ericsson AB, Molndal
fYear
2006
fDate
12-15 Dec. 2006
Firstpage
309
Lastpage
312
Abstract
This work presents a fully integrated differential 5.8 GHz low-noise amplifier (LNA). The LNA is fabricated in a 90 nm RF-CMOS process and has a power gain of 12.5 dB, an IIP3 of 4dBm, and a noise figure of 1.7 dB consuming 14 mA from a 1.2 V supply. Compared to previously reported differential CMOS designs this LNA show lower noise figure and better linearity.
Keywords
CMOS integrated circuits; low noise amplifiers; CMOS designs; LNA; frequency 5.8 GHz; integrated differential low-noise amplifier; power gain; CMOS technology; Differential amplifiers; Frequency; Impedance matching; Linearity; Low-noise amplifiers; Noise figure; Noise measurement; Thin film inductors; Topology; CMOS; LNA; Low noise amplifier; cascode; differential;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-4-902339-08-6
Electronic_ISBN
978-4-902339-11-6
Type
conf
DOI
10.1109/APMC.2006.4429428
Filename
4429428
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