An ultra-low voltage UWB CMOS low noise amplifier

Author

Yu, Yueh-Hua ; Chen, Yi-Jan Emery ; Heo, Deukhyoun

Author_Institution

Nat. Taiwan Univ., Taipei

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

313

Lastpage

316

Abstract

This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.

Keywords

CMOS integrated circuits; distributed amplifiers; low noise amplifiers; ultra wideband technology; CMOS technology; UWB low noise amplifier; bandwidth 2.7 GHz to 9.1 GHz; distributed amplifier; gain 10 dB; inductive degeneration; power 7 mW; size 0.18 mum; voltage 0.6 V; Bandwidth; Broadband amplifiers; CMOS technology; Distributed amplifiers; Frequency; Inductors; Low voltage; Low-noise amplifiers; MOSFETs; Noise figure; CMOS; LNA; UWB; distributed amplifier; low power; ultra-low voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429429

Filename

4429429