Title :
An ultra-low voltage UWB CMOS low noise amplifier
Author :
Yu, Yueh-Hua ; Chen, Yi-Jan Emery ; Heo, Deukhyoun
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.
Keywords :
CMOS integrated circuits; distributed amplifiers; low noise amplifiers; ultra wideband technology; CMOS technology; UWB low noise amplifier; bandwidth 2.7 GHz to 9.1 GHz; distributed amplifier; gain 10 dB; inductive degeneration; power 7 mW; size 0.18 mum; voltage 0.6 V; Bandwidth; Broadband amplifiers; CMOS technology; Distributed amplifiers; Frequency; Inductors; Low voltage; Low-noise amplifiers; MOSFETs; Noise figure; CMOS; LNA; UWB; distributed amplifier; low power; ultra-low voltage;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429429
