Title :
Investigation of reflection and transmission coefficients on active multilayered semiconductor structure
Author :
Bulgakov, A.A. ; Shramkova, O.V.
Author_Institution :
NASU, Kharkov
Abstract :
The effect of carrier drift on the reflection and transmission coefficients on multilayered periodic semiconductor structure placed into external electrical field is considered in the work. We investigate a finite periodic structure composed of alternating layers of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. It is investigated the dependencies of reflection and transmission coefficients on a frequency and drift velocity of carriers. It is shown that drift of carriers in layers leads to the appearance of instability.
Keywords :
III-V semiconductors; electromagnetic wave reflection; electromagnetic wave transmission; gallium arsenide; indium compounds; multilayers; periodic structures; semiconductor heterojunctions; GaAs; InSb; active multilayered semiconductor structure; carrier drift; carrier drift velocity; carrier frequency; electron - hole semiconductors; external electrical field; finite stratified periodic structure; n-GaAs semiconductor layer; n-InSb semiconductor layer; p-GaAs semiconductor layer; p-InSb semiconductor layer; reflection coefficients; transition scattering; transmission coefficients; Charge carrier processes; Dielectrics; Electromagnetic reflection; Electromagnetic scattering; Electrons; Frequency; Periodic structures; Permittivity; Semiconductor materials; Solid state circuits; Energy conservation law; dispersion relation; drift of electrons and holes; fine-stratified periodic structure; induced transition scattering; reflection coefficient; transmission coefficient;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429438
