• DocumentCode
    2758775
  • Title

    Inclined plane initial tracking voltage for AC, +DC and -DC

  • Author

    Ghunem, Refat Atef ; Jayaram, Shesha H. ; Cherney, Edward A.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Waterloo, Waterloo, ON, Canada
  • fYear
    2012
  • fDate
    10-13 June 2012
  • Firstpage
    459
  • Lastpage
    463
  • Abstract
    The tracking voltage in the inclined plane test with AC is compared to the tracking voltage with DC, using the initial-tracking-voltage test method as per ASTM D2303 and a proposed coefficient of variation parameter. The severity of DC, as opposed to AC voltage, on RTV silicone rubber materials is confirmed using both strategies, where +DC is found to be the most severe voltage. The leakage current waveforms are found to consist of two components corresponding to wetting of the surface and to dry-band arcing. The mean value of the leakage current is a reflection of the wetting of the surface; whereas, the leakage current variation is a reflection of the dry-band arcing. Accordingly, a coefficient of variation parameter is proposed as an indicator of the relative severity of the dry band-arcing. Employing this coefficient of variation parameter, the ratios of the equivalent +DC and -DC to AC initial-tracking voltage are attained for 30 wt% silica filled two-part RTV silicone rubber. The results obtained using the coefficient of variation parameter have been verified experimentally using the initial-tracking-voltage in ASTM D2303.
  • Keywords
    arcs (electric); leakage currents; silicon compounds; silicone rubber insulators; wetting; +DC; -DC; AC initial-tracking voltage; ASTM D2303; SiO2; dry-band arcing; inclined plane initial tracking voltage; initial-tracking-voltage test; leakage current waveforms; silica; surface wetting; two-part RTV silicone rubber; Degradation; Insulation life; Leakage current; Polymers; Rubber; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation (ISEI), Conference Record of the 2012 IEEE International Symposium on
  • Conference_Location
    San Juan, PR
  • ISSN
    1089-084X
  • Print_ISBN
    978-1-4673-0488-7
  • Electronic_ISBN
    1089-084X
  • Type

    conf

  • DOI
    10.1109/ELINSL.2012.6251510
  • Filename
    6251510