Title :
Femtosecond laser machining of gallium nitride
Author :
Kim, I. ; Kim, H.-S. ; Hetterich, Michael ; Jones, U. ; Girkin, J.M. ; Bente, Erwin ; Dawson, M.D.
Author_Institution :
Inst. of Photon., Strathclyde Univ., Glasgow, UK
Abstract :
Femtosecond laser ablation of GaN using a Ti:sapphire mode locked laser has been studied. A 15 μm thick GaN layer and a 250 μm thick free standing GaN grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE), respectively, were used in this experiment. To find an optimum condition for GaN fs laser machining, laser fluence and number of pulses exciting a given area were varied. After machining, the sample was inspected by confocal microscopy, surface profilometry and SEM
Keywords :
III-V semiconductors; MOCVD; gallium compounds; high-speed optical techniques; laser beam machining; optical fabrication; optical microscopy; scanning electron microscopy; surface topography measurement; vapour phase epitaxial growth; 15 mum; 250 mum; GaN; GaN fs laser machining; HVPE; MOCVD; SEM; Ti:sapphire mode locked laser; confocal microscopy; femtosecond laser machining; free standing GaN; hydride vapor phase epitaxy; laser fluence; metal organic chemical vapor deposition; optimum condition; surface profilometry; Chemical lasers; Gallium nitride; III-V semiconductor materials; Laser ablation; Laser mode locking; Machining; Organic chemicals; Pulsed laser deposition; Scanning electron microscopy; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893967
