Femtosecond laser machining of gallium nitride

Author

Kim, I. ; Kim, H.-S. ; Hetterich, Michael ; Jones, U. ; Girkin, J.M. ; Bente, Erwin ; Dawson, M.D.

Author_Institution

Inst. of Photon., Strathclyde Univ., Glasgow, UK

Volume

2

fYear

2000

fDate

2000

Firstpage

565

Abstract

Femtosecond laser ablation of GaN using a Ti:sapphire mode locked laser has been studied. A 15 μm thick GaN layer and a 250 μm thick free standing GaN grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE), respectively, were used in this experiment. To find an optimum condition for GaN fs laser machining, laser fluence and number of pulses exciting a given area were varied. After machining, the sample was inspected by confocal microscopy, surface profilometry and SEM

Keywords

III-V semiconductors; MOCVD; gallium compounds; high-speed optical techniques; laser beam machining; optical fabrication; optical microscopy; scanning electron microscopy; surface topography measurement; vapour phase epitaxial growth; 15 mum; 250 mum; GaN; GaN fs laser machining; HVPE; MOCVD; SEM; Ti:sapphire mode locked laser; confocal microscopy; femtosecond laser machining; free standing GaN; hydride vapor phase epitaxy; laser fluence; metal organic chemical vapor deposition; optimum condition; surface profilometry; Chemical lasers; Gallium nitride; III-V semiconductor materials; Laser ablation; Laser mode locking; Machining; Organic chemicals; Pulsed laser deposition; Scanning electron microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.893967

Filename

893967