Vertical-cavity semiconductor optical amplifiers

Author

Bjorlin, E.S. ; Riou, B. ; Abraham, Patrick ; Piprek, Joachim ; Yi-Jen Chiu ; Black, K.A. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

2000

fDate

2000

Firstpage

573

Abstract

The structure of our vertical cavity semiconductor optical amplifier (VCSOA) is shown. The device was optically pumped through the substrate and bottom mirror using a 980 nm pump laser diode, and was operated in reflection mode. Two high reflectivity GaAs-AlGaAs distributed Bragg reflector (DBR) mirrors were wafer bonded to an InP-InGaAsP multiple quantum well (MQW) active region consisting of three sets of seven InAsP QWs

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical pumping; quantum well lasers; reflectivity; 980 nm; 980 nm pump laser diode; GaAs-AlGaAs; InAsP; InAsP QWs; InP-InGaAsP; InP-InGaAsP MQW active region; SOA; bottom mirror; high reflectivity GaAs-AlGaAs DBR mirrors; optically pumped; reflection mode; substrate; vertical-cavity semiconductor optical amplifiers; Diode lasers; Distributed Bragg reflectors; Laser excitation; Mirrors; Optical devices; Optical pumping; Optical reflection; Semiconductor optical amplifiers; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.893971

Filename

893971