Title :
Vertical-cavity semiconductor optical amplifiers
Author :
Bjorlin, E.S. ; Riou, B. ; Abraham, Patrick ; Piprek, Joachim ; Yi-Jen Chiu ; Black, K.A. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The structure of our vertical cavity semiconductor optical amplifier (VCSOA) is shown. The device was optically pumped through the substrate and bottom mirror using a 980 nm pump laser diode, and was operated in reflection mode. Two high reflectivity GaAs-AlGaAs distributed Bragg reflector (DBR) mirrors were wafer bonded to an InP-InGaAsP multiple quantum well (MQW) active region consisting of three sets of seven InAsP QWs
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical pumping; quantum well lasers; reflectivity; 980 nm; 980 nm pump laser diode; GaAs-AlGaAs; InAsP; InAsP QWs; InP-InGaAsP; InP-InGaAsP MQW active region; SOA; bottom mirror; high reflectivity GaAs-AlGaAs DBR mirrors; optically pumped; reflection mode; substrate; vertical-cavity semiconductor optical amplifiers; Diode lasers; Distributed Bragg reflectors; Laser excitation; Mirrors; Optical devices; Optical pumping; Optical reflection; Semiconductor optical amplifiers; Stimulated emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893971
