Title :
FGTMR - Fine grain redundancy method for reconfigurable architectures under high failure rates
Author :
Niknahad, Mahtab ; Sander, Oliver ; Becker, Juergen
Author_Institution :
Inst. for Inf. Process. Technol. (ITIV), Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
Abstract :
For each new device generation based on smaller structures Single Event Errors (SEE) and intrinsic device faults gain more and more importance as device sensitivity increases. Triple Modular Redundancy (TMR) is a common reliability methodology for mitigating upsets and failures in architectures like modern Field Programmable Gate Arrays (FPGA). However for new device generations simply replicating complete systems may not be sufficient anymore especially in harsh environments, such as space applications, as higher failure rates may disturb a second instance before the faulty first one recovers. In this paper we focus on the Single Event Upset (SEU) mitigation challenges in nano scale architectures which can result in crucial situations. Our approach transforms the classical idea of TMR on module level down to a technological view based on FPGA architecture primitives. Such a fine grain approach allows to cope with several of the challenges caused by shrinking devices. This way the design can especially recover from multiple failures including Multiple Bit Upsets (MBUs). Moreover, we show how our approach can be integrated into standard tool flows thereby introducing TMR automatically. Finally we extend our idea to MBU tolerance by experiments.
Keywords :
failure analysis; field programmable gate arrays; reconfigurable architectures; system recovery; FGTMR; FPGA; field programmable gate arrays; fine grain redundancy method; high failure rates; intrinsic device faults; multiple bit upsets; nanoscale architectures; reconfigurable architectures; single event errors; single event upset; triple modular redundancy; Circuit faults; Logic gates; Redundancy; Table lookup; Terminology; Tunneling magnetoresistance; FPGA; Fault Tolerance; Radiation Effects; Triple Modular Redundancy;
Conference_Titel :
Nano, Information Technology and Reliability (NASNIT), 2011 15th North-East Asia Symposium on
Conference_Location :
Macao
Print_ISBN :
978-1-4577-0793-3
DOI :
10.1109/NASNIT.2011.6111144