Title :
Development of thin film resistor and abrasion protective layer for thermal printing head
Author :
Kuramasu, Keizaburo ; Korechika, Tetsuhiro ; Tomioka, Tatsuyuki ; Kitagawa, Makoto ; Hira, Takashi
Author_Institution :
Matsushita Electron. Components Co. Ltd., Osaka, Japan
Abstract :
A double-layer resistor formed by RF sputtering and an abrasion protective layer formed by the plasma CVD (chemical vapor deposition) method are described. The Si/(Ti-C-Si-O) double layer resistor has high resistivity, low temperature coefficient of resistance (TCR), and high resistance to thermal oxidation. The SiON abrasion protective layer formed by the plasma CVD method using an SiH4-N2N 2O gas mixture at temperatures above 350°C has high microhardness, high thermal durability and high productivity. A highly reliable, highly productive, high-resistance thermal printing head was realized using these materials. Its experimentally determined characteristics are reported
Keywords :
CVD coatings; hardness; protective coatings; sputtered coatings; thermal printers; thin film resistors; RF sputtering; Si-TiCSiO; SiON; abrasion protective layer; double-layer resistor; microhardness; plasma CVD; resistivity; temperature coefficient of resistance; thermal durability; thermal oxidation; thermal printing head; thin film resistor; Chemical vapor deposition; Conductivity; Plasma chemistry; Plasma temperature; Protection; Radio frequency; Resistors; Sputtering; Thermal resistance; Transistors;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International
Conference_Location :
Nara
DOI :
10.1109/IEMTS.1989.76131
