Characterization of dielectric properties for PZN-PMNPT ferroelectric thin films at microwave frequencies

Author

Wong, H.M. ; Luo, B. ; Ong, L.C. ; Yao, K. ; Guo, Y.X.

Author_Institution

Nanyang Technol. Univ., Singapore

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

579

Lastpage

582

Abstract

Dielectric properties of pseudo-epitaxial perovskite ferroelectric PZN-PMN-PT thin films deposited on lanthanum aluminate (LAO) substrates were characterized for microwave application. Dielectric constant, voltage tunability, and loss tangent of the thin films were determined via coplanar waveguides (CPWs) and interdigital capacitors (IDCs) structures. Scattering parameters were extracted through measurements for both structures and the dielectric properties were obtained by the conformal mapping method (CMM) and partial capacitance techniques (PCT). A tunability of between 0.5% to 3% at 25 V was obtained at 30 MHz to 3 GHz.

Keywords

conformal mapping; coplanar waveguides; ferroelectric thin films; lanthanum compounds; permittivity; PZN-PMN-PT ferroelectric thin films; conformal mapping method; coplanar waveguides; dielectric constant; interdigital capacitors; lanthanum aluminate; loss tangent; microwave frequencies; partial capacitance technique; voltage tunability; Coplanar waveguides; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Lanthanum; Microwave frequencies; Sputtering; Voltage; Coplanar waveguides; dielectric constant; ferroelectric thin films; interdigital capacitors; loss tangent; partial capacitance technique; voltage tunability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429492

Filename

4429492