Title :
Reduced threshold current and enhanced mode selectivity in InGaN MQW lasers with deeply etched air/nitride distributed Bragg reflector
Author :
Marinelli, Claudio ; Sargent, Laurence J. ; Rorison, Judy M. ; Penty, Richard V. ; White, Ian H. ; Heard, Peter J. ; Hasnain, Gautham ; Schneider, Rick
Author_Institution :
Centre for Commun. Res., Bristol Univ., UK
Abstract :
Single mode operation over an extended current range and reduced threshold current is obtained from InGaN MQW lasers by introducing two pairs of air/nitride quarter wavelength layers at one end of the cavity
Keywords :
Fabry-Perot resonators; III-V semiconductors; distributed Bragg reflector lasers; focused ion beam technology; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; sputter etching; wide band gap semiconductors; DBR grating; FIB etching; Fabry-Perot cavity; InGaN; MQW lasers; air/nitride quarter wavelength layers; deeply etched DBR; enhanced mode selectivity; extended current range; pulsed lasers; reduced threshold current; single mode operation; Acceleration; Distributed Bragg reflectors; Etching; Gratings; Laser beams; Laser modes; Leakage current; Particle beams; Quantum well devices; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894011
