DocumentCode :
2759675
Title :
Thermal modeling of three-dimensional integrated circuits considering the thermal removal capability of different TSVs
Author :
Ding, Hua ; Wang, Wei ; Qian, Zhiliang ; Tsui, Chi-ying ; Lai, Liangzhen
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear :
2011
fDate :
19-20 July 2011
Firstpage :
1
Lastpage :
7
Abstract :
In this paper, a thorough comparison of the heat removal capability of different types of through silicon vias (TSVs) for three-dimensional ICs is presented. It is shown that power TSVs with the associated power delivery network (PDN) has significantly better heat removal capability than the other types of TSVs. An accurate and efficient thermal simulation methodology is then proposed by incorporating an accurate heat removal model of the PTSVs and PDN. Experimental results show that the accuracy of the proposed methodology is close to that of detailed 3-D finite volume based heat solver, while the computational effort is much lower.
Keywords :
finite volume methods; integrated circuit modelling; thermal analysis; three-dimensional integrated circuits; 3D finite volume method; heat removal model; heat solver; power TSV; power delivery network; thermal modeling; thermal removal capability; thermal simulation methodology; three-dimensional IC; three-dimensional integrated circuits; through silicon vias; Computational fluid dynamics; Equations; Heating; Metals; 3D-IC; TSV; Thermal model; nodal analysis method; power delivery network;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4577-0145-0
Type :
conf
DOI :
10.1109/ASQED.2011.6111693
Filename :
6111693
Link To Document :
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