DocumentCode
2759675
Title
Thermal modeling of three-dimensional integrated circuits considering the thermal removal capability of different TSVs
Author
Ding, Hua ; Wang, Wei ; Qian, Zhiliang ; Tsui, Chi-ying ; Lai, Liangzhen
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2011
fDate
19-20 July 2011
Firstpage
1
Lastpage
7
Abstract
In this paper, a thorough comparison of the heat removal capability of different types of through silicon vias (TSVs) for three-dimensional ICs is presented. It is shown that power TSVs with the associated power delivery network (PDN) has significantly better heat removal capability than the other types of TSVs. An accurate and efficient thermal simulation methodology is then proposed by incorporating an accurate heat removal model of the PTSVs and PDN. Experimental results show that the accuracy of the proposed methodology is close to that of detailed 3-D finite volume based heat solver, while the computational effort is much lower.
Keywords
finite volume methods; integrated circuit modelling; thermal analysis; three-dimensional integrated circuits; 3D finite volume method; heat removal model; heat solver; power TSV; power delivery network; thermal modeling; thermal removal capability; thermal simulation methodology; three-dimensional IC; three-dimensional integrated circuits; through silicon vias; Computational fluid dynamics; Equations; Heating; Metals; 3D-IC; TSV; Thermal model; nodal analysis method; power delivery network;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4577-0145-0
Type
conf
DOI
10.1109/ASQED.2011.6111693
Filename
6111693
Link To Document