Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode

Author

Kim, Soo-Hyun

Author_Institution

Sch. of Mater. Sci. & Eng., Yeungnam Univ., Gyeongsan, South Korea

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

1

Abstract

Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O₂. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.

Keywords

atomic layer deposition; copper; electrodes; electroplating; metallic thin films; nucleation; organometallic compounds; ruthenium; ALD-Ru film; Cu electroplating; DRAM capacitor electrodes; Ru thin films; Ru(0) metallorganic precursors; atomic layer deposition; capacitor electrode; molecular O₂; nucleations; seed layer; ultra-thin Ru films; zero metal valence precursor; Atomic layer deposition; Capacitors; Educational institutions; Electrodes; Films; Metals;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251564

Filename

6251564