Title :
Atomic layer deposition of Ru thin films with enhanced nucleations using various Ru(0) metallorganic precursors and molecular O2: Applications to seed layer for Cu electroplating and capacitor electrode
Author_Institution :
Sch. of Mater. Sci. & Eng., Yeungnam Univ., Gyeongsan, South Korea
Abstract :
Recently, we reported that the nucleation of ALD-Ru film was enhanced considerably using a zero metal valence precursor, compared to the utilization of precursors with higher metal valences, which is essential to achieve continuity in ultra-thin Ru films. In this study, we report a comparative study on ALD-Ru processes utilizing three kinds of Ru(0) precursors and molecular O2. The developed ALD-Ru processes were applied for preparing DRAM capacitor electrodes and seed layers for Cu electroplating.
Keywords :
atomic layer deposition; copper; electrodes; electroplating; metallic thin films; nucleation; organometallic compounds; ruthenium; ALD-Ru film; Cu electroplating; DRAM capacitor electrodes; Ru thin films; Ru(0) metallorganic precursors; atomic layer deposition; capacitor electrode; molecular O2; nucleations; seed layer; ultra-thin Ru films; zero metal valence precursor; Atomic layer deposition; Capacitors; Educational institutions; Electrodes; Films; Metals;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251564
