DocumentCode
2759863
Title
Uncured ELK as a chemical mechanical planarization stop layer in Cu/XLK interconnect
Author
Wu, Y.H. ; Lee, M.H. ; Tsai, C.H. ; Lee, H.H. ; Lee, C.J. ; Lu, H.H. ; Bao, T.I. ; Shue, S.L. ; Yu, C.H.
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
3
Abstract
A novel approach of copper CMP stop layer using uncured extreme low-K was demonstrated to improve the within-wafer Rs uniformity on Cu/extra low-k (XLK) interconnect. This CMP stop layer could be converted into a low dielectric constant film by removing porogen with post CMP treatment, hence its impact on overall´s film capacitance is minimized.
Keywords
chemical mechanical polishing; planarisation; CMP treatment; chemical mechanical planarization stop layer; copper CMP stop layer; film capacitance; low dielectric constant film; porogen; uncured ELK; Capacitance; Contamination; Delay; Dielectric constant; Films; Integrated circuit interconnections;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251567
Filename
6251567
Link To Document