Title :
In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects
Author :
Yang, C. -C ; Chen, F. ; Li, B. ; Shobha, H. ; Nguyen, S. ; Grill, A. ; Ye, W. ; AuBuchon, J. ; Shek, M. ; Edelstein, D.
Author_Institution :
IBM Res., Albany, NY, USA
Abstract :
Co films with various thicknesses were selectively deposited as Cu capping layers by a chemical vapor deposition technique. Both in-situ and ex-situ Co/SiC(N,H), metal/dielectric, capping processes were evaluated and shown comparable parametrics to the control reference, which contains only SiC(N,H) cap layer. A dependence of Cu electromigration (EM) resistance on the deposited Co thickness was observed from the ex-situ capping process. Without increasing the Co cap thickness, further EM lifetime enhancement was achieved from the in-situ capping process. Selectivity of the Co metal deposition was also confirmed with time-dependent dielectric breakdown test results.
Keywords :
chemical vapour deposition; cobalt compounds; copper compounds; electric breakdown; electromigration; integrated circuit interconnections; silicon compounds; Co; Co-SiCH; Co-SiCN; Cu; EM lifetime enhancement; capping process evaluation; chemical vapor deposition; cobalt film; cobalt metal deposition; copper capping layer; copper electromigration resistance; copper interconnect; dielectric evaluation; electromigration enhancement; ex-situ capping process; in-situ capping process; in-situ metal-dielectric capping process; metal evaluation; time-dependent dielectric breakdown testing; Dielectrics; Electromigration; Metals; Process control; Reliability; Resistance; Surface treatment;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251568
