Measurement and analysis of thermal stresses in 3-D integrated structures containing through-silicon-vias

Author

Jiang, Tengfei ; Ryu, Suk-Kyu ; Zhao, Qiu ; Im, Jay ; Son, Ho-Young ; Byun, Kwang-Yoo ; Huang, Rui ; Ho, Paul S.

Author_Institution

Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

In this work, experimental measurements and numerical analysis of the thermal stresses in TSV structures are presented. The stresses are measured using the micro-Raman spectroscopy and the precision bending beam technique. Together, the two methods provide a complementary approach for characterizing thermomechanical behaviors of the TSV structures. The effect of plasticity on the stresses is discussed, and the measured stress behavior is used to analyze the keep-out zone (KOZ) for active devices near the TSVs.

Keywords

Raman spectra; integrated circuit measurement; thermal stresses; three-dimensional integrated circuits; 3D integrated structures; KOZ; Si; TSV structures; active devices; keep-out zone analysis; microRaman spectroscopy; numerical analysis; plasticity effect; precision bending beam technique; thermal stress measurement; thermomechanical behaviors; through-silicon-vias; Semiconductor device measurement; Silicon; Stress; Stress measurement; Temperature measurement; Thermal stresses; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251570

Filename

6251570