Plasma enhanced ALD pore sealing for highly porous SiOCH films with k = 2.0

Author

Kimura, Yosuke ; Kobayashi, Akiko ; Ishikawa, Dai ; Nakano, Akinori ; Matsushita, Kiyohiro ; Kobayashi, Nobuyoshi

Author_Institution

ASM, Tama, Japan

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

In order to implement highly porous PECVD SiOCH films with k = 2.0 in ILD integration, the UV-assisted restoration to remove plasma damages related with dry etch and pore sealing by plasma enhanced ALD (PEALD)-SiN formation to prevent the metal penetration into the film during subsequent metallization process was investigated. Sequential application of the restoration and pore sealing processes was proved to be the best solution enabling successful sealing capability with preserving pristine k-value of the porous SiOCH films.

Keywords

atomic layer deposition; integrated circuit metallisation; low-k dielectric thin films; plasma CVD; porous materials; silicon compounds; PECVD; SiN; SiOCH; UV assisted restoration; atomic layer deposition; dry etch; highly porous films; metal penetration; metallization process; plasma damages; plasma enhanced ALD; pore sealing; Chemicals; Films; Hydrocarbons; Image restoration; Plasmas; Silicon compounds; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251572

Filename

6251572