Title :
Computational analysis of mechanical and electromigration reliability problems
Author :
Avci, I. ; Balasingam, P. ; Chawla, V. ; El-Sayed, K. ; Johnson, M.D. ; Kucherov, A. ; Li, S. ; Mishra, B. ; Oh, Y. ; Polsky, B. ; Qin, Z. ; Simeonov, S. ; Tian, S. ; Xu, X. ; Zhou, W. ; Zhu, M.
Author_Institution :
Synopsys Inc., Mountain View, CA, USA
Abstract :
The reliability of complex interconnect structures at all levels of the chip integration hierarchy has become a major concern due to the use of fine feature sizes, diverse materials, and complex 3D architectures. Reliability issues range from stress related failures such as dielectric cracking and interface debonding during manufacturing to electrical and mechanical failures such as electromigration and void formation during operation. This paper summarizes computational results obtained using a unified physics-based 3D simulation framework.
Keywords :
electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; chip integration hierarchy; complex 3D architectures; computational analysis; dielectric cracking; diverse materials; electrical failures; electromigration reliability problems; interconnect structures; interface debonding; mechanical failures; mechanical reliability problems; stress related failures; unified physics-based 3D simulation framework; void formation; Electromigration; Materials; Mathematical model; Metals; Reliability; Strain; Stress;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251575
