Design of broad-band, low-noise microwave transistor amplifiers with input and output VSWR constraints using CAD tools

Author

Tanzi, Nebil

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

Volume

2

fYear

1994

fDate

3-5 Aug 1994

Firstpage

1215

Abstract

A methodology which permits one to determine the required input and output termination impedances of a given transistor such that the amplifier can simultaneously meet power gain, noise figure, and input and output VSWR constraints is described. To support the proposed method, an amplifier design example at 2 GHz with power gain, noise figure, and input and output VSWR constraints is presented. The applicability of the design methodology to the design of broad-band, low-noise amplifier design is demonstrated with three examples

Keywords

UHF amplifiers; circuit CAD; circuit noise; impedance matching; microwave amplifiers; wideband amplifiers; 2 GHz; CAD tools; SHF; UHF; broadband LNA; design methodology; input VSWR constraints; low-noise amplifiers; microwave transistor amplifiers; noise figure; output VSWR constraints; power gain; termination impedances; Design methodology; Equations; Impedance; Impedance matching; Low-noise amplifiers; Microwave amplifiers; Microwave transistors; Noise figure; Power amplifiers; Process design; Transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on

Conference_Location

Lafayette, LA

Print_ISBN

0-7803-2428-5

Type

conf

DOI

10.1109/MWSCAS.1994.519027

Filename

519027