Title :
Improved thermal stability of GaAs/AlGaAs single quantum well by Zn out-diffusion from Zn doped GaAs substrate
Author :
Zhao, Tcng ; Choi, I.W. ; Hing, Peter ; Yuan, Shu ; Ong, Teik K. ; Ooi, Boon S. ; Jiang, Jian ; Chan, M.C.Y. ; Surya, Charles ; Li, E.H.
Author_Institution :
Sch. of Mater. Eng., Nanyang Technol. Univ., Singapore
Abstract :
We report the effects of n-type doping by Si and p-type doping by Zn in the GaAs substrate on the thermal intermixing of undoped GaAs/Al 0.24Ga0.76As single quantum well (QW) structures. For comparison, semi-insulating GaAs substrate was also used. The samples with Si-doped GaAs substrate and semi-insulating GaAs substrate show blue shifts that are in agreement with thermal stability studies by other workers. The sample with Zn-doped GaAs substrate, however, shows clear evidence of suppressed intermixing by Zn diffusion from the substrate into the QW structure. The enhanced thermal stability of the GaAs/Al0.24Ga0.76As QW structure is attributed to a Zn-diffusion induced reduction in the number of column-III vacancies in the QW structure
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; photoluminescence; rapid thermal annealing; semiconductor doping; semiconductor quantum wells; thermal stability; zinc; GaAs-Al0.24Ga0.76As; GaAs/AlGaAs single quantum well; GaAs:Si-Al0.24Ga0.76As; GaAs:Zn-Al0.24Ga0.76As; Zn out-diffusion; blue shift; impurity induced intermixing; n-type doping; p-type doping; photoluminescence; rapid thermal annealing; semi-insulating GaAs substrate; thermal stability; Annealing; Atomic measurements; Cathode ray tubes; Computational Intelligence Society; Doping; Gallium arsenide; Insulation; Temperature; Thermal stability; Zinc;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894051
