Title :
Quantum well intermixing technologies for quasi-phase-matching gratings
Author :
Helmy, A.Saher ; Hutchings, D.C. ; Kleckner, T.C. ; Aitchison, J.S. ; Bryce, A.C. ; Marsh, J.H. ; Martin, P. ; Landesman, J.P. ; Brown, C.T.A. ; Moutzouris, K. ; Ebrahimzadeh, M. ; Ayling, S.G.
Author_Institution :
Electron. & Electr. Eng., Univ. of Glasgow, UK
Abstract :
Most of the studies carried out to date on the spatial selectively of the quantum well intermixing process have involved characterising either large intermixed areas, or sub 1 μm features for 1D and 0D confinement potentials. Features that lie in the range of 1-10 μm are of interest because they can be used to realise various devices such as waveguides, and domain disordering for quasi-phase matching (QPM). In this paper different technologies were investigated to fabricate QPM gratings in GaAs/AlAs superlattice waveguides
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; optical phase matching; optical waveguides; semiconductor quantum wells; semiconductor superlattices; GaAs-AlAs; GaAs/AlAs superlattice waveguide; domain disordering; fabrication; quantum well intermixing; quasi-phase-matching grating; Area measurement; Chemical technology; Chemical vapor deposition; Frequency conversion; Gallium arsenide; Gratings; Plasma chemistry; Plasma waves; Stress measurement; Superlattices;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894052
