DocumentCode :
2760139
Title :
Integration of a low-k organic polymer material (k=2.3) for reducing both resistance and capacitance
Author :
Hirai, Mihoko ; Akiyama, Yoshihito ; Koga, Kazuhiro ; Kawakami, Hiroshi ; Nakatani, Koji ; Tada, Masahiro
Author_Institution :
Consortium for Adv. Semicond. Mater. & Related Technol. (CASMAT) Kokubunji, Kokubunji, Japan
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrated an integration of a non-progen organic polymer (k=2.3) developed by Sumitomo Bakelite Co. Ltd. H2/He plasma damage recovery process which was developed for organic materials achieved 5% capacitance reduction with keeping enough TDDB reliability. The mechanism was presumed by chemical analysis. Moreover, the TDDB lifetime was not degraded even without a barrier metal, indicating this polymer could enable resistance reduction for its Cu diffusion barrier performance. This polymer would reduce both resistance and capacitance.
Keywords :
capacitance; chemical analysis; electric resistance; polymers; reliability; Cu; TDDB lifetime; barrier metal; capacitance reduction; chemical analysis; diffusion barrier performance; low-k organic polymer material; nonprogen organic polymer; organic materials; plasma damage recovery process; reliability; resistance reduction; Capacitance; Etching; Films; Helium; Metals; Plasmas; Polymers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
ISSN :
pending
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IITC.2012.6251579
Filename :
6251579
Link To Document :
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