Title :
InGaAlP red VCSELs
Author :
Hatakoshi, Gen-ichi ; Takaoka, Keiji ; Ishikawa, Masatoshi
Author_Institution :
Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
InGaAlP-based red-light vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated. Excellent temperature characteristics have been realized for 666-nm VCSELs with a proton-implanted planar structure
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; surface emitting lasers; 666 nm; InGaAlP; InGaAlP red VCSEL; proton implanted planar structure; temperature characteristics; Assembly; Conductivity; High speed optical techniques; Laboratories; Large Hadron Collider; Light sources; Optical fibers; Plastics; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894057
