• DocumentCode
    2760181
  • Title

    InGaAlP red VCSELs

  • Author

    Hatakoshi, Gen-ichi ; Takaoka, Keiji ; Ishikawa, Masatoshi

  • Author_Institution
    Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    722
  • Abstract
    InGaAlP-based red-light vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated. Excellent temperature characteristics have been realized for 666-nm VCSELs with a proton-implanted planar structure
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; surface emitting lasers; 666 nm; InGaAlP; InGaAlP red VCSEL; proton implanted planar structure; temperature characteristics; Assembly; Conductivity; High speed optical techniques; Laboratories; Large Hadron Collider; Light sources; Optical fibers; Plastics; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.894057
  • Filename
    894057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2760181