Title :
Compressively-strained InGaAsP-active (λ=0.85 μm) VCSELs
Author :
Tansu, Nelson ; Mawst, Luke J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
We demonstrate that laser structures with InGaAsP-active/AlGaAs-confining layers are easy to implement into a conventional VCSEL design with good performance. The structures show performance similar to that of conventional GaAs-active layer VCSELs at λ=0.85 μm. Optimization of the compressive strain value in the active layer and implementation of strain-compensated InGaAsP/GaAsP/AlGaAs active regions is expected to further improve device performance
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; surface emitting lasers; 0.85 micron; AlGaAs confining layer; InGaAsP active layer; InGaAsP-AlGaAs; VCSEL; compressive strain; Capacitive sensors; Degradation; Gallium arsenide; Mirrors; Optical device fabrication; Optical propagation; Quantum cascade lasers; Quantum well lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894058
