• DocumentCode
    2760204
  • Title

    Effect of thermal cycling on the signal integrity and morphology of TSV isolation liner- SiO2

  • Author

    Okoro, Chukwudi ; Obeng, Yaw S.

  • Author_Institution
    Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol. (NIST), Gaithersburg, MD, USA
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This study is focused on understanding the effect of thermal cycling on the signal integrity characteristics of TSV isolation liner (SiO2). The use of radio frequency (RF) signals is found to be a good metrology tool for the detection of discontinuities in the SiO2 isolation liner. Signal degradation is found to scale with the attained number of thermal cycles. Atomic force microscopy (AFM) analysis revealed that void formation and growth in the SiO2 isolation liner is the root cause for this observed trend. Therefore the life time of TSVs will be significantly affected by the SiO2 isolation liner, thus, their understanding, engineering and optimization will be essential for prolonged high performance TSVs.
  • Keywords
    atomic force microscopy; isolation technology; optimisation; radiofrequency integrated circuits; signal processing; silicon compounds; three-dimensional integrated circuits; voids (solid); AFM analysis; RF signals; SiO2; TSV isolation liner; atomic force microscopy analysis; high performance TSV; metrology tool; radio frequency signals; signal degradation; signal integrity characteristics; signal morphology; thermal cycling; void formation; Capacitance; Degradation; Radio frequency; Silicon; Temperature; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • Conference_Location
    San Jose, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251582
  • Filename
    6251582