DocumentCode
2760204
Title
Effect of thermal cycling on the signal integrity and morphology of TSV isolation liner- SiO2
Author
Okoro, Chukwudi ; Obeng, Yaw S.
Author_Institution
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol. (NIST), Gaithersburg, MD, USA
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
3
Abstract
This study is focused on understanding the effect of thermal cycling on the signal integrity characteristics of TSV isolation liner (SiO2). The use of radio frequency (RF) signals is found to be a good metrology tool for the detection of discontinuities in the SiO2 isolation liner. Signal degradation is found to scale with the attained number of thermal cycles. Atomic force microscopy (AFM) analysis revealed that void formation and growth in the SiO2 isolation liner is the root cause for this observed trend. Therefore the life time of TSVs will be significantly affected by the SiO2 isolation liner, thus, their understanding, engineering and optimization will be essential for prolonged high performance TSVs.
Keywords
atomic force microscopy; isolation technology; optimisation; radiofrequency integrated circuits; signal processing; silicon compounds; three-dimensional integrated circuits; voids (solid); AFM analysis; RF signals; SiO2; TSV isolation liner; atomic force microscopy analysis; high performance TSV; metrology tool; radio frequency signals; signal degradation; signal integrity characteristics; signal morphology; thermal cycling; void formation; Capacitance; Degradation; Radio frequency; Silicon; Temperature; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location
San Jose, CA
ISSN
pending
Print_ISBN
978-1-4673-1138-0
Electronic_ISBN
pending
Type
conf
DOI
10.1109/IITC.2012.6251582
Filename
6251582
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