A 26 – 65 GHz GaAs pHEMT cascaded single stage distributed amplifier with high gain/area efficiency

Author

Lin, Kai-Yun ; Chen, I-Shan ; Chiou, Hwann-Kaeo

Author_Institution

Nat. Central Univ., Taoyuan

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

722

Lastpage

725

Abstract

This paper demonstrates the design of a miniature three-stage cascaded single stage distributed amplifier (CSSDA), which functions over the frequency range from 26 GHz to 65 GHz with a 16.5 dB small signal gain and a gain bandwidth product (GBW) of 260 GHz. This three-stage CSSDA was designed and fabricated using a 0.15 mum GaAs- based pseudomorphic high electron-mobility transistor (pHEMT) MMIC foundry process provided by WIN Semiconductor, and the chip size is compact as 1.65 times 0.83 mm which yields the best gain/area efficiency among the previous works.

Keywords

MMIC; cascade networks; distributed amplifiers; gallium arsenide; high electron mobility transistors; GaAs; MMIC foundry; bandwidth 260 GHz; cascaded single stage distributed amplifier; frequency 26 GHz to 65 GHz; gain 16.5 dB; gain bandwidth product; pHEMT; pseudomorphic high electron-mobility transistor; Bandwidth; Broadband amplifiers; Capacitors; Distributed amplifiers; Frequency; Gallium arsenide; Impedance; MMICs; Millimeter wave technology; PHEMTs; Broadband amplifier; cascaded single-stage distributed amplifier (CSSDA); distributed amplifier (DA); monolithic microwave integrated circuit (MMIC);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429521

Filename

4429521