Title :
1.55 μm, double-intracavity contacted, InP-lattice-matched VCSELs
Author :
Nakagawa, S. ; Hall, Eric ; Almuneau, G. ; Kim, J.K. ; Buell, D.A. ; Kroemer, H. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Mater., California Univ., Santa Barbara, CA, USA
Abstract :
We demonstrate a 1.55 μm, double-intracavity contacted VCSEL operating at room temperature under CW. The whole structure is completely lattice-matched to InP and grown at single step. A VCSEL with a 14 μm diameter current aperture shows the threshold current of 2.0 mA and the maximum output power of 480 μW at 25°C, and it operates up to 60°C. The threshold voltage and differential resistance are 1.3 V and 40 Ω, respectively, for a 10 μm aperture VCSEL
Keywords :
III-V semiconductors; indium compounds; semiconductor lasers; surface emitting lasers; 1.3 V; 1.55 micron; 2.0 mA; 25 to 60 C; 40 ohm; 480 muW; InP; differential resistance; double intracavity contacted VCSEL; lattice matched growth; output power; room temperature CW operation; threshold current; threshold voltage; Apertures; Density estimation robust algorithm; Electrons; Gold; Helium; Indium gallium arsenide; Indium phosphide; Kilns; Superlattices; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894059
