DocumentCode :
2760240
Title :
A new procedure to extract ultra-low specific contact resistivity
Author :
Hsuan-Tzu Tseng ; Bing-Yue Tsui
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this work, a new procedure to extract ultra-low specific contact resistivity down to 10-9 Ω-cm2 is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process.
Keywords :
contact resistance; resistors; semiconductor-metal boundaries; 3D simulation; Cross-bridge-Kelvin resistor structure; fabrication process; looser design rules; metal-semiconductor contact; test structure; ultra-low specific contact resistivity extraction; Accuracy; Conductivity; Guidelines; Metals; Radio frequency; Resistance; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
ISSN :
pending
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IITC.2012.6251584
Filename :
6251584
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2760240
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