• DocumentCode
    2760240
  • Title

    A new procedure to extract ultra-low specific contact resistivity

  • Author

    Hsuan-Tzu Tseng ; Bing-Yue Tsui

  • Author_Institution
    Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, a new procedure to extract ultra-low specific contact resistivity down to 10-9 Ω-cm2 is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process.
  • Keywords
    contact resistance; resistors; semiconductor-metal boundaries; 3D simulation; Cross-bridge-Kelvin resistor structure; fabrication process; looser design rules; metal-semiconductor contact; test structure; ultra-low specific contact resistivity extraction; Accuracy; Conductivity; Guidelines; Metals; Radio frequency; Resistance; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • Conference_Location
    San Jose, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251584
  • Filename
    6251584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2760240