Single-transverse mode and stable-polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser array on GaAs (311)B

Author

Arai, Masakazu ; Nishiyama, Nobuhiko ; Shinada, Satoshi ; Matsutani, Akihiro ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

Volume

2

fYear

2000

fDate

2000

Firstpage

728

Abstract

In this study, we demonstrate 960 nm single-mode VCSEL arrays grown on a GaAs (311)B substrate. All the devices in a 3×3 array exhibited single-transverse-mode and stable-polarization operation in an entire injection current range. Moreover, we investigated the dynamic characteristics such as time-resolved orthogonal polarization suppression ratio (OPSR) and 2.5 Gbit/s NRZ through a multi-mode fiber data transmission

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser stability; light polarisation; semiconductor laser arrays; surface emitting lasers; 2.5 Gbit/s; 960 nm; GaAs; GaAs (311)B substrate; GaInAs-GaAs; GaInAs/GaAs vertical cavity surface emitting laser array; NRZ; current injection; dynamic characteristics; multi-mode fiber data transmission; single transverse mode operation; stable polarization operation; time-resolved orthogonal polarization suppression ratio; Gallium arsenide; Optical fiber polarization; Optical polarization; Oxidation; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894060

Filename

894060